FZT593TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at -1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Input voltage breakdown is available at 100V volts.Collector current can be as low as 1A volts at its maximum.
FZT593TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz
FZT593TA Applications
There are a lot of Diodes Incorporated FZT593TA applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
