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MJ14002G

MJ14002G

MJ14002G

ON Semiconductor

MJ14002G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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MJ14002G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-204AE
Surface Mount NO
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 300W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating 60A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 60A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 50A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 12A, 60A
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 8.51mm
Length 38.86mm
Width 26.67mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $15.71000 $15.71
10 $14.44200 $144.42
100 $12.19700 $1219.7
500 $10.85010 $5425.05
1,000 $9.97710 $9.9771
MJ14002G Product Details

MJ14002G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 50A 3V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 12A, 60A.The emitter base voltage can be kept at 5V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (60A).When collector current reaches its maximum, it can reach 60A volts.

MJ14002G Features


the DC current gain for this device is 15 @ 50A 3V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 12A, 60A
the emitter base voltage is kept at 5V
the current rating of this device is 60A

MJ14002G Applications


There are a lot of ON Semiconductor MJ14002G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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