BCX53-10,115 Overview

DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.As you can see, the part has a transition frequency of 145MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BCX53-10,115 Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz

BCX53-10,115 Applications

There are a lot of Nexperia USA Inc. BCX53-10,115 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting