BCX53-10,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCX53-10,115 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
1.3W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
145MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BCX53
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.35W
Case Connection
COLLECTOR
Power - Max
1.3W
Transistor Application
SWITCHING
Gain Bandwidth Product
145MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
145MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.343207
$0.343207
10
$0.323780
$3.2378
100
$0.305453
$30.5453
500
$0.288163
$144.0815
1000
$0.271852
$271.852
BCX53-10,115 Product Details
BCX53-10,115 Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.As you can see, the part has a transition frequency of 145MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCX53-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 145MHz
BCX53-10,115 Applications
There are a lot of Nexperia USA Inc. BCX53-10,115 applications of single BJT transistors.