DXT790AP5-13 Overview

DC current gain in this device equals 300 @ 10mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -170mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 450mV @ 300mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages of -3A should be maintained to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.In this part, there is a transition frequency of 100MHz.There is a breakdown input voltage of 40V volts that it can take.In extreme cases, the collector current can be as low as 3A volts.

DXT790AP5-13 Features

the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

DXT790AP5-13 Applications

There are a lot of Diodes Incorporated DXT790AP5-13 applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface