DXT790AP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXT790AP5-13 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerDI™ 5
Number of Pins
3
Weight
95.991485mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
POWERDI-5
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
3.2W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DXT790
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3.2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
20nA
JEDEC-95 Code
TO-252
Vce Saturation (Max) @ Ib, Ic
450mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-170mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
300
Continuous Collector Current
-3A
Height
1.15mm
Length
4.05mm
Width
5.45mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.440196
$0.440196
10
$0.415279
$4.15279
100
$0.391772
$39.1772
500
$0.369597
$184.7985
1000
$0.348676
$348.676
DXT790AP5-13 Product Details
DXT790AP5-13 Overview
DC current gain in this device equals 300 @ 10mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -170mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 450mV @ 300mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages of -3A should be maintained to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.In this part, there is a transition frequency of 100MHz.There is a breakdown input voltage of 40V volts that it can take.In extreme cases, the collector current can be as low as 3A volts.
DXT790AP5-13 Features
the DC current gain for this device is 300 @ 10mA 2V a collector emitter saturation voltage of -170mV the vce saturation(Max) is 450mV @ 300mA, 3A the emitter base voltage is kept at -5V a transition frequency of 100MHz
DXT790AP5-13 Applications
There are a lot of Diodes Incorporated DXT790AP5-13 applications of single BJT transistors.