PBSS4130T,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4130T,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PBSS4130
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power - Max
480mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
270mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
1A
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.338936
$0.338936
10
$0.319751
$3.19751
100
$0.301652
$30.1652
500
$0.284578
$142.289
1000
$0.268470
$268.47
PBSS4130T,215 Product Details
PBSS4130T,215 Overview
This device has a DC current gain of 300 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 270mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Parts of this part have transition frequencies of 100MHz.The device has a 30V maximal voltage - Collector Emitter Breakdown.
PBSS4130T,215 Features
the DC current gain for this device is 300 @ 500mA 2V the vce saturation(Max) is 270mV @ 50mA, 1A a transition frequency of 100MHz
PBSS4130T,215 Applications
There are a lot of Nexperia USA Inc. PBSS4130T,215 applications of single BJT transistors.