BCX5316H6327XTSA1 Overview

In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.A breakdown input voltage of 80V volts can be used.Maximum collector currents can be below 1A volts.

BCX5316H6327XTSA1 Features

the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

BCX5316H6327XTSA1 Applications

There are a lot of Infineon Technologies BCX5316H6327XTSA1 applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver