FZT600TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT600TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
140V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT600
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 10mA, 1A
Collector Emitter Breakdown Voltage
140V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
1.1V
Max Breakdown Voltage
140V
Frequency - Transition
250MHz
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
10V
hFE Min
2000
Height
1.65mm
Length
6.55mm
Width
3.55mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.620520
$0.62052
10
$0.585396
$5.85396
100
$0.552261
$55.2261
500
$0.521001
$260.5005
1000
$0.491510
$491.51
FZT600TA Product Details
FZT600TA Overview
This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 10mA, 1A.With the emitter base voltage set at 10V, an efficient operation can be achieved.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 250MHz.Breakdown input voltage is 140V volts.A maximum collector current of 2A volts can be achieved.
FZT600TA Features
the DC current gain for this device is 2000 @ 500mA 10V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 1.2V @ 10mA, 1A the emitter base voltage is kept at 10V the current rating of this device is 2A a transition frequency of 250MHz
FZT600TA Applications
There are a lot of Diodes Incorporated FZT600TA applications of single BJT transistors.