Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FZT600TA

FZT600TA

FZT600TA

Diodes Incorporated

FZT600TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT600TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 140V
Max Power Dissipation2W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating2A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT600
Pin Count4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 10mA, 1A
Collector Emitter Breakdown Voltage140V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage1.1V
Max Breakdown Voltage 140V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 10V
hFE Min 2000
Height 1.65mm
Length 6.55mm
Width 3.55mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:11026 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.620520$0.62052
10$0.585396$5.85396
100$0.552261$55.2261
500$0.521001$260.5005
1000$0.491510$491.51

FZT600TA Product Details

FZT600TA Overview


This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 10mA, 1A.With the emitter base voltage set at 10V, an efficient operation can be achieved.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 250MHz.Breakdown input voltage is 140V volts.A maximum collector current of 2A volts can be achieved.

FZT600TA Features


the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.2V @ 10mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 2A
a transition frequency of 250MHz

FZT600TA Applications


There are a lot of Diodes Incorporated FZT600TA applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

Get Subscriber

Enter Your Email Address, Get the Latest News