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FZT603TA

FZT603TA

FZT603TA

Diodes Incorporated

FZT603TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT603TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 80V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT603
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 500mA 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.13V @ 20mA, 2A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 1.13V
Max Breakdown Voltage 80V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 2A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.610979 $0.610979
10 $0.576395 $5.76395
100 $0.543769 $54.3769
500 $0.512989 $256.4945
1000 $0.483953 $483.953
FZT603TA Product Details

FZT603TA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 5000 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.13V, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.13V @ 20mA, 2A.A constant collector voltage of 2A is necessary for high efficiency.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.The part has a transition frequency of 150MHz.As a result, it can handle voltages as low as 80V volts.In extreme cases, the collector current can be as low as 2A volts.

FZT603TA Features


the DC current gain for this device is 5000 @ 500mA 5V
a collector emitter saturation voltage of 1.13V
the vce saturation(Max) is 1.13V @ 20mA, 2A
the emitter base voltage is kept at 10V
the current rating of this device is 2A
a transition frequency of 150MHz

FZT603TA Applications


There are a lot of Diodes Incorporated FZT603TA applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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