MJ15001G Overview

This device has a DC current gain of 25 @ 4A 2V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 4A.Emitter base voltages of 5V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (15A).There is a transition frequency of 2MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.

MJ15001G Features

the DC current gain for this device is 25 @ 4A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 2MHz

MJ15001G Applications

There are a lot of ON Semiconductor MJ15001G applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface