2SA2126-TL-E Overview

This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -520mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 520mV @ 100mA, 2A.Keeping the emitter base voltage at -6V can result in a high level of efficiency.Collector current can be as low as 3A volts at its maximum.

2SA2126-TL-E Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -520mV
the vce saturation(Max) is 520mV @ 100mA, 2A
the emitter base voltage is kept at -6V

2SA2126-TL-E Applications

There are a lot of ON Semiconductor 2SA2126-TL-E applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver