Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NJL1302DG

NJL1302DG

NJL1302DG

ON Semiconductor

NJL1302DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJL1302DG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-5
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -260V
Max Power Dissipation200W
Peak Reflow Temperature (Cel) 260
Current Rating-15A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count5
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation200W
Transistor Application AMPLIFIER
Gain Bandwidth Product30MHz
Transistor Type PNP + Diode (Isolated)
Collector Emitter Voltage (VCEO) 260V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 5A 5V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 1A, 10A
Collector Emitter Breakdown Voltage260V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage3V
Collector Base Voltage (VCBO) 260V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Height 25.98mm
Length 19.89mm
Width 4.89mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1073 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.25000$5.25
25$4.45520$111.38
100$3.86100$386.1
500$3.28680$1643.4

NJL1302DG Product Details

NJL1302DG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.When VCE saturation is 3V @ 1A, 10A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.

NJL1302DG Features


the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz

NJL1302DG Applications


There are a lot of ON Semiconductor NJL1302DG applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News