NJL1302DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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NJL1302DG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-264-5
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
-260V
Max Power Dissipation
200W
Peak Reflow Temperature (Cel)
260
Current Rating
-15A
Frequency
30MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
5
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
200W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Transistor Type
PNP + Diode (Isolated)
Collector Emitter Voltage (VCEO)
260V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 5A 5V
Current - Collector Cutoff (Max)
50μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 1A, 10A
Collector Emitter Breakdown Voltage
260V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
3V
Collector Base Voltage (VCBO)
260V
Emitter Base Voltage (VEBO)
5V
hFE Min
75
Height
25.98mm
Length
19.89mm
Width
4.89mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.25000
$5.25
25
$4.45520
$111.38
100
$3.86100
$386.1
500
$3.28680
$1643.4
1,000
$2.77200
$2.772
NJL1302DG Product Details
NJL1302DG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 75 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.When VCE saturation is 3V @ 1A, 10A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
NJL1302DG Features
the DC current gain for this device is 75 @ 5A 5V a collector emitter saturation voltage of 3V the vce saturation(Max) is 3V @ 1A, 10A the emitter base voltage is kept at 5V the current rating of this device is -15A a transition frequency of 30MHz
NJL1302DG Applications
There are a lot of ON Semiconductor NJL1302DG applications of single BJT transistors.