KSC815YTA Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 50mA 1V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 200mA.200MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 45V volts.Maximum collector currents can be below 200mA volts.

KSC815YTA Features

the DC current gain for this device is 120 @ 50mA 1V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 200MHz

KSC815YTA Applications

There are a lot of ON Semiconductor KSC815YTA applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting