ZXTP25020DFLTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP25020DFLTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
290MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP25020D
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Gain Bandwidth Product
290MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
260mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
290MHz
Collector Emitter Saturation Voltage
260mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
7V
Height
1.02mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.022858
$1.022858
10
$0.964960
$9.6496
100
$0.910340
$91.034
500
$0.858811
$429.4055
1000
$0.810199
$810.199
ZXTP25020DFLTA Product Details
ZXTP25020DFLTA Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 260mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 260mV @ 400mA, 4A.An emitter's base voltage can be kept at 7V to gain high efficiency.Parts of this part have transition frequencies of 290MHz.This device can take an input voltage of 20V volts before it breaks down.Collector current can be as low as 1.5A volts at its maximum.
ZXTP25020DFLTA Features
the DC current gain for this device is 300 @ 10mA 2V a collector emitter saturation voltage of 260mV the vce saturation(Max) is 260mV @ 400mA, 4A the emitter base voltage is kept at 7V a transition frequency of 290MHz
ZXTP25020DFLTA Applications
There are a lot of Diodes Incorporated ZXTP25020DFLTA applications of single BJT transistors.