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ZXTP25020DFLTA

ZXTP25020DFLTA

ZXTP25020DFLTA

Diodes Incorporated

ZXTP25020DFLTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP25020DFLTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation350mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 290MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP25020D
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation350mW
Gain Bandwidth Product290MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 260mV @ 400mA, 4A
Collector Emitter Breakdown Voltage20V
Transition Frequency 290MHz
Collector Emitter Saturation Voltage260mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 7V
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:13835 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.022858$1.022858
10$0.964960$9.6496
100$0.910340$91.034
500$0.858811$429.4055
1000$0.810199$810.199

ZXTP25020DFLTA Product Details

ZXTP25020DFLTA Overview


This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 260mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 260mV @ 400mA, 4A.An emitter's base voltage can be kept at 7V to gain high efficiency.Parts of this part have transition frequencies of 290MHz.This device can take an input voltage of 20V volts before it breaks down.Collector current can be as low as 1.5A volts at its maximum.

ZXTP25020DFLTA Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 290MHz

ZXTP25020DFLTA Applications


There are a lot of Diodes Incorporated ZXTP25020DFLTA applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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