NJVMJD350T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVMJD350T4G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.56W
Terminal Position
SINGLE
Terminal Form
GULL WING
Base Part Number
MJD350
Pin Count
3
Reference Standard
AEC-Q101
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
10MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 10mA, 100mA
Collector Emitter Breakdown Voltage
300V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
3V
hFE Min
30
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.662692
$3.662692
10
$3.455370
$34.5537
100
$3.259783
$325.9783
500
$3.075267
$1537.6335
1000
$2.901195
$2901.195
NJVMJD350T4G Product Details
NJVMJD350T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 10mA, 100mA.With the emitter base voltage set at 3V, an efficient operation can be achieved.There is a transition frequency of 10MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
NJVMJD350T4G Features
the DC current gain for this device is 30 @ 50mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 10mA, 100mA the emitter base voltage is kept at 3V a transition frequency of 10MHz
NJVMJD350T4G Applications
There are a lot of ON Semiconductor NJVMJD350T4G applications of single BJT transistors.