NJVMJD350T4G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 10mA, 100mA.With the emitter base voltage set at 3V, an efficient operation can be achieved.There is a transition frequency of 10MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

NJVMJD350T4G Features

the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 10mA, 100mA
the emitter base voltage is kept at 3V
a transition frequency of 10MHz

NJVMJD350T4G Applications

There are a lot of ON Semiconductor NJVMJD350T4G applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver