2SCR522MT2L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR522MT2L Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-723
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Pin Count
3
JESD-30 Code
R-PDSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
400MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
20V
Transition Frequency
400MHz
Collector Emitter Saturation Voltage
120mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
hFE Min
120
Continuous Collector Current
200mA
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.198950
$0.19895
10
$0.187688
$1.87688
100
$0.177064
$17.7064
500
$0.167041
$83.5205
1000
$0.157587
$157.587
2SCR522MT2L Product Details
2SCR522MT2L Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 2V.The collector emitter saturation voltage is 120mV, giving you a wide variety of design options.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In the part, the transition frequency is 400MHz.This device can take an input voltage of 20V volts before it breaks down.Maximum collector currents can be below 200mA volts.
2SCR522MT2L Features
the DC current gain for this device is 120 @ 1mA 2V a collector emitter saturation voltage of 120mV the vce saturation(Max) is 300mV @ 10mA, 100mA the emitter base voltage is kept at 5V a transition frequency of 400MHz
2SCR522MT2L Applications
There are a lot of ROHM Semiconductor 2SCR522MT2L applications of single BJT transistors.