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FZT851QTA

  • FZT851QTA
  • FZT851QTA

FZT851QTA

FZT851QTA

Diodes Incorporated

FZT851QTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT851QTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 40
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G4
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 3W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 375mV
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 375mV @ 300mA, 6A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 130MHz
Frequency - Transition 130MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.201439 $0.201439
10 $0.190037 $1.90037
100 $0.179280 $17.928
500 $0.169132 $84.566
1000 $0.159559 $159.559
FZT851QTA Product Details

FZT851QTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.A maximum collector current of 6A volts can be achieved.

FZT851QTA Features


the DC current gain for this device is 100 @ 2A 1V
the vce saturation(Max) is 375mV @ 300mA, 6A
a transition frequency of 130MHz

FZT851QTA Applications


There are a lot of Diodes Incorporated FZT851QTA applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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