BC850BW,115 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.The part has a transition frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.A maximum collector current of 100mA volts is possible.

BC850BW,115 Features

the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC850BW,115 Applications

There are a lot of Nexperia USA Inc. BC850BW,115 applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver