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FZT853TA

FZT853TA

FZT853TA

Diodes Incorporated

FZT853TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT853TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated DC 100V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6A
Frequency 130MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number FZT853
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 340mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 130MHz
Collector Emitter Saturation Voltage 340mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 6A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.98000 $0.98
500 $0.9702 $485.1
1000 $0.9604 $960.4
1500 $0.9506 $1425.9
2000 $0.9408 $1881.6
2500 $0.931 $2327.5
FZT853TA Product Details

FZT853TA Overview


In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 340mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 340mV @ 500mA, 5A.Single BJT transistor is essential to maintain the continuous collector voltage at 6A to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 6A.As you can see, the part has a transition frequency of 130MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.A maximum collector current of 6A volts can be achieved.

FZT853TA Features


the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 6A
a transition frequency of 130MHz

FZT853TA Applications


There are a lot of Diodes Incorporated FZT853TA applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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