2SC4617EBTLR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.Continuous collector voltage should be kept at 150mA for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.There is a transition frequency of 180MHz in the part.There is a breakdown input voltage of 50V volts that it can take.During maximum operation, collector current can be as low as 150mA volts.
2SC4617EBTLR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
2SC4617EBTLR Applications
There are a lot of ROHM Semiconductor 2SC4617EBTLR applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
