BSS63LT1G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 25mA 1V.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 6V can achieve high levels of efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 95MHz in the part.An input voltage of 100V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BSS63LT1G Features

the DC current gain for this device is 30 @ 25mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 95MHz

BSS63LT1G Applications

There are a lot of ON Semiconductor BSS63LT1G applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver