BSS63LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BSS63LT1G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
95MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BSS63
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Power - Max
225mW
Halogen Free
Halogen Free
Gain Bandwidth Product
95MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 25mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 2.5mA, 25mA
Collector Emitter Breakdown Voltage
100V
Transition Frequency
95MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
110V
Emitter Base Voltage (VEBO)
6V
hFE Min
30
Height
1.11mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.04096
$0.12288
6,000
$0.03707
$0.22242
15,000
$0.03241
$0.48615
30,000
$0.02930
$0.879
75,000
$0.02620
$1.965
150,000
$0.02205
$3.3075
BSS63LT1G Product Details
BSS63LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 25mA 1V.With a collector emitter saturation voltage of -250mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 6V can achieve high levels of efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 95MHz in the part.An input voltage of 100V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BSS63LT1G Features
the DC current gain for this device is 30 @ 25mA 1V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 250mV @ 2.5mA, 25mA the emitter base voltage is kept at 6V the current rating of this device is -100mA a transition frequency of 95MHz
BSS63LT1G Applications
There are a lot of ON Semiconductor BSS63LT1G applications of single BJT transistors.