BC337-25 A1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC337-25 A1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
800mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.269000
$0.269
10
$0.253774
$2.53774
100
$0.239409
$23.9409
500
$0.225858
$112.929
1000
$0.213073
$213.073
BC337-25 A1G Product Details
BC337-25 A1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.There is no device package available from the supplier for this product.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC337-25 A1G Features
the DC current gain for this device is 160 @ 100mA 5V the vce saturation(Max) is 700mV @ 50mA, 500mA the supplier device package of TO-92
BC337-25 A1G Applications
There are a lot of Taiwan Semiconductor Corporation BC337-25 A1G applications of single BJT transistors.