BC807-40W-7 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.During maximum operation, collector current can be as low as 500mA volts.

BC807-40W-7 Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC807-40W-7 Applications

There are a lot of Diodes Incorporated BC807-40W-7 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting