MJD32C-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 3A 4V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.There is a transition frequency of 3MHz in the part.As a result, it can handle voltages as low as 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
MJD32C-13 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 3MHz
MJD32C-13 Applications
There are a lot of Diodes Incorporated MJD32C-13 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
