MMBT3904FZ-7B Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 10V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 200mA for high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.As you can see, the part has a transition frequency of 300MHz.Single BJT transistor can be broken down at a voltage of 40V volts.A maximum collector current of 200mA volts is possible.

MMBT3904FZ-7B Features

the DC current gain for this device is 100 @ 10mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

MMBT3904FZ-7B Applications

There are a lot of Diodes Incorporated MMBT3904FZ-7B applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver