BF821,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BF821,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
TO-236AB
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1996
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BF821
Polarity
PNP
Power - Max
250mW
Forward Voltage
1V
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 25mA 20V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 5mA, 30mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
50mA
Frequency - Transition
60MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.308459
$0.308459
10
$0.290999
$2.90999
100
$0.274527
$27.4527
500
$0.258988
$129.494
1000
$0.244329
$244.329
BF821,215 Product Details
BF821,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Product comes in TO-236AB supplier package.Device displays Collector Emitter Breakdown (300V maximal voltage).
BF821,215 Features
the DC current gain for this device is 50 @ 25mA 20V the vce saturation(Max) is 800mV @ 5mA, 30mA the supplier device package of TO-236AB
BF821,215 Applications
There are a lot of Nexperia USA Inc. BF821,215 applications of single BJT transistors.