MMBT3904LP-7B Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.A constant collector voltage of 200mA is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.This device can take an input voltage of 40V volts before it breaks down.Collector current can be as low as 200mA volts at its maximum.
MMBT3904LP-7B Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904LP-7B Applications
There are a lot of Diodes Incorporated MMBT3904LP-7B applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver