MMBT3904LP-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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MMBT3904LP-7B Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-UFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
Automotive, AEC-Q101
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
250mW
Terminal Position
BOTTOM
Base Part Number
MMBT3904
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Max Frequency
100MHz
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
40V
Frequency - Transition
300MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
200mA
Turn Off Time-Max (toff)
250ns
Turn On Time-Max (ton)
70ns
Collector-Base Capacitance-Max
4pF
Height
500μm
Length
1mm
Width
600μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.10335
$1.0335
30,000
$0.09600
$2.88
MMBT3904LP-7B Product Details
MMBT3904LP-7B Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.A constant collector voltage of 200mA is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.This device can take an input voltage of 40V volts before it breaks down.Collector current can be as low as 200mA volts at its maximum.
MMBT3904LP-7B Features
the DC current gain for this device is 100 @ 10mA 1V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at 6V a transition frequency of 300MHz
MMBT3904LP-7B Applications
There are a lot of Diodes Incorporated MMBT3904LP-7B applications of single BJT transistors.