MMBT4401-7-F Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.A collector emitter saturation voltage of 750mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 600mA to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.In this part, there is a transition frequency of 250MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

MMBT4401-7-F Features

the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz

MMBT4401-7-F Applications

There are a lot of Diodes Incorporated MMBT4401-7-F applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting