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MMST3906-7-F

MMST3906-7-F

MMST3906-7-F

Diodes Incorporated

MMST3906-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMST3906-7-F Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMST3906
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Continuous Collector Current -200mA
Turn On Time-Max (ton) 70ns
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04456 $0.13368
6,000 $0.03919 $0.23514
15,000 $0.03382 $0.5073
30,000 $0.03204 $0.9612
75,000 $0.03025 $2.26875
150,000 $0.02726 $4.089
MMST3906-7-F Product Details

MMST3906-7-F Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.A collector emitter saturation voltage of -300mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.Continuous collector voltages of -200mA should be maintained to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.In extreme cases, the collector current can be as low as 200mA volts.

MMST3906-7-F Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 300MHz

MMST3906-7-F Applications


There are a lot of Diodes Incorporated MMST3906-7-F applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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