KSC945YTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.There is a transition frequency of 300MHz in the part.A breakdown input voltage of 50V volts can be used.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
KSC945YTA Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945YTA Applications
There are a lot of ON Semiconductor KSC945YTA applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
