ZTX601B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX601B Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
160V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX601
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 10mA, 1A
Collector Emitter Breakdown Voltage
160V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
1.1V
Frequency - Transition
250MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
10V
Continuous Collector Current
1A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.91000
$0.91
10
$0.81500
$8.15
100
$0.63510
$63.51
500
$0.52468
$262.34
ZTX601B Product Details
ZTX601B Overview
DC current gain in this device equals 10000 @ 500mA 10V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZTX601B Features
the DC current gain for this device is 10000 @ 500mA 10V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 1.2V @ 10mA, 1A the emitter base voltage is kept at 10V the current rating of this device is 1A a transition frequency of 250MHz
ZTX601B Applications
There are a lot of Diodes Incorporated ZTX601B applications of single BJT transistors.