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ZTX601B

ZTX601B

ZTX601B

Diodes Incorporated

ZTX601B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX601B Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 160V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 1A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX601
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 10mA, 1A
Collector Emitter Breakdown Voltage 160V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 1.1V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 1A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.91000 $0.91
10 $0.81500 $8.15
100 $0.63510 $63.51
500 $0.52468 $262.34
1,000 $0.41423 $0.41423
ZTX601B Product Details

ZTX601B Overview


DC current gain in this device equals 10000 @ 500mA 10V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

ZTX601B Features


the DC current gain for this device is 10000 @ 500mA 10V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.2V @ 10mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 250MHz

ZTX601B Applications


There are a lot of Diodes Incorporated ZTX601B applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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