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ZTX657

ZTX657

ZTX657

Diodes Incorporated

ZTX657 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX657 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingBulk
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 300V
Max Power Dissipation1W
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Current Rating500mA
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX657
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Gain Bandwidth Product30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage300V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7143 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.91000$0.91
10$0.81500$8.15
100$0.63510$63.51
500$0.52468$262.34

ZTX657 Product Details

ZTX657 Overview


This device has a DC current gain of 50 @ 100mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In this part, there is a transition frequency of 30MHz.During maximum operation, collector current can be as low as 500mA volts.

ZTX657 Features


the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz

ZTX657 Applications


There are a lot of Diodes Incorporated ZTX657 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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