NSVBCP56-10T3G Overview

DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A transition frequency of 130MHz is present in the part.Maximum collector currents can be below 1A volts.

NSVBCP56-10T3G Features

the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

NSVBCP56-10T3G Applications

There are a lot of ON Semiconductor NSVBCP56-10T3G applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface