CPH3209-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
CPH3209-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SC-96
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
900mW
Reach Compliance Code
not_compliant
Pin Count
3
Power - Max
900mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
155mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
155mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage
30V
Frequency - Transition
450MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.065515
$0.065515
500
$0.048173
$24.0865
1000
$0.040144
$40.144
2000
$0.036829
$73.658
5000
$0.034420
$172.1
10000
$0.032018
$320.18
15000
$0.030965
$464.475
50000
$0.030448
$1522.4
CPH3209-TL-E Product Details
CPH3209-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.A VCE saturation (Max) of 155mV @ 75mA, 1.5A means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.A maximum collector current of 3A volts is possible.
CPH3209-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V the vce saturation(Max) is 155mV @ 75mA, 1.5A the emitter base voltage is kept at 5V
CPH3209-TL-E Applications
There are a lot of ON Semiconductor CPH3209-TL-E applications of single BJT transistors.