ZTX949STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX949STZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-30V
Max Power Dissipation
1.2W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-4.5A
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX949
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.2W
Power - Max
1.58W
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
320mV @ 300mA, 5A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
-4.5A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.45570
$0.9114
6,000
$0.43400
$2.604
ZTX949STZ Product Details
ZTX949STZ Overview
DC current gain in this device equals 100 @ 1A 1V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at -4.5A to achieve high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 4.5A volts at Single BJT transistors maximum.
ZTX949STZ Features
the DC current gain for this device is 100 @ 1A 1V the vce saturation(Max) is 320mV @ 300mA, 5A the emitter base voltage is kept at 6V the current rating of this device is -4.5A a transition frequency of 100MHz
ZTX949STZ Applications
There are a lot of Diodes Incorporated ZTX949STZ applications of single BJT transistors.