JANTXV2N6301 Overview

This device has a DC current gain of 750 @ 4A 3V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 3V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.In the part, the transition frequency is 4MHz.A maximum collector current of 8A volts can be achieved.

JANTXV2N6301 Features

the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz

JANTXV2N6301 Applications

There are a lot of Microsemi Corporation JANTXV2N6301 applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface