ZX5T3ZTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZX5T3ZTC Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
3W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
152MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
ZX5T3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Power - Max
2.1W
Transistor Application
SWITCHING
Gain Bandwidth Product
152MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
5.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
20nA
Vce Saturation (Max) @ Ib, Ic
185mV @ 550mA, 5.5A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
152MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
7.5V
hFE Min
200
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.29799
$1.19196
ZX5T3ZTC Product Details
ZX5T3ZTC Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 185mV @ 550mA, 5.5A.The emitter base voltage can be kept at 7.5V for high efficiency.The part has a transition frequency of 152MHz.Single BJT transistor is possible to have a collector current as low as 5.5A volts at Single BJT transistors maximum.
ZX5T3ZTC Features
the DC current gain for this device is 200 @ 500mA 2V the vce saturation(Max) is 185mV @ 550mA, 5.5A the emitter base voltage is kept at 7.5V a transition frequency of 152MHz
ZX5T3ZTC Applications
There are a lot of Diodes Incorporated ZX5T3ZTC applications of single BJT transistors.