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ZX5T851ASTZ

ZX5T851ASTZ

ZX5T851ASTZ

Diodes Incorporated

ZX5T851ASTZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZX5T851ASTZ Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 60V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 4.5A
Frequency 130MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZX5T851A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 1V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 210mV @ 200mA, 5A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 130MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 7V
hFE Min 100
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.540477 $0.540477
10 $0.509884 $5.09884
100 $0.481023 $48.1023
500 $0.453795 $226.8975
1000 $0.428109 $428.109
ZX5T851ASTZ Product Details

ZX5T851ASTZ Overview


In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 210mV @ 200mA, 5A means Ic has reached its maximum value(saturated).With the emitter base voltage set at 7V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4.5A.Parts of this part have transition frequencies of 130MHz.A breakdown input voltage of 60V volts can be used.Single BJT transistor is possible to have a collector current as low as 4.5A volts at Single BJT transistors maximum.

ZX5T851ASTZ Features


the DC current gain for this device is 100 @ 2A 1V
the vce saturation(Max) is 210mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 4.5A
a transition frequency of 130MHz

ZX5T851ASTZ Applications


There are a lot of Diodes Incorporated ZX5T851ASTZ applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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