AUIRF7313QTR

new-10%

Manufacturer part number:AUIRF7313QTR

Manufacturer:Infineon Technologies

Description:MOSFET 2N-CH 30V 6.5A 8SOIC

Case Package:SOT-23

Datasheet:AUIRF7313QTR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Max Power Dissipation	2.4W
Terminal Form	GULL WING
Reference Standard	AEC-Q101
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Turn On Delay Time	3.7 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	29m Ω @ 6.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	755pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Rise Time	7.3ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	6.9A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	450 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant