CSD85301Q2T

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Manufacturer part number:CSD85301Q2T

Manufacturer:Texas Instruments

Description:CSD85301Q2T datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD85301Q2T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Number of Pins	6
Weight	9.695537mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Additional Feature	AVALANCHE RATED
Max Power Dissipation	2.3W
Terminal Form	NO LEAD
Base Part Number	CSD85301
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	469pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	5.4nC @ 4.5V
Rise Time	26ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	900mV
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	5A
Drain-source On Resistance-Max	0.039Ohm
Drain to Source Breakdown Voltage	20V
Avalanche Energy Rating (Eas)	3.8 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 5V Drive
Length	2mm
Width	2mm
Thickness	750μm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free