SI4202DY-T1-GE3

new-10%

Manufacturer part number:SI4202DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET DUAL N-CH 20V (D-S)

Case Package:SOT-23

Datasheet:SI4202DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Weight	506.605978mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	14MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.7W
Number of Elements	2
Number of Channels	2
Voltage	30V
Element Configuration	Dual
Current	75A
Power Dissipation	2.4W
Power - Max	3.7W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	14mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	710pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12.1A
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	8 ns
Continuous Drain Current (ID)	12.1A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	710pF
FET Feature	Logic Level Gate
Drain to Source Resistance	17mOhm
Rds On Max	14 mΩ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free