BC56PA,115 Overview

In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V allows for a high level of efficiency.The part has a transition frequency of 180MHz.Single BJT transistor can be broken down at a voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.

BC56PA,115 Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz

BC56PA,115 Applications

There are a lot of Nexperia USA Inc. BC56PA,115 applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface