ZXT13N15DE6TA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 1A 2V.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.When VCE saturation is 200mV @ 100mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.The emitter base voltage can be kept at 7.5V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 72MHz in the part.The breakdown input voltage is 15V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

ZXT13N15DE6TA Features

the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 5A
a transition frequency of 72MHz

ZXT13N15DE6TA Applications

There are a lot of Diodes Incorporated ZXT13N15DE6TA applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter