ZXT13N15DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXT13N15DE6TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Number of Pins
6
Weight
14.996898mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
SOT26 (SC74R)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
15V
Max Power Dissipation
1.1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
5A
Frequency
72MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXT13N15D
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.7W
Transistor Application
SWITCHING
Gain Bandwidth Product
72MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
200mV @ 100mA, 5A
Collector Emitter Breakdown Voltage
15V
Transition Frequency
72MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
15V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
7.5V
hFE Min
300
Continuous Collector Current
5A
Height
1.3mm
Length
3.1mm
Width
1.8mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.012558
$2.012558
10
$1.898640
$18.9864
100
$1.791170
$179.117
500
$1.689783
$844.8915
1000
$1.594135
$1594.135
ZXT13N15DE6TA Product Details
ZXT13N15DE6TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 1A 2V.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.When VCE saturation is 200mV @ 100mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.The emitter base voltage can be kept at 7.5V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 72MHz in the part.The breakdown input voltage is 15V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXT13N15DE6TA Features
the DC current gain for this device is 300 @ 1A 2V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 200mV @ 100mA, 5A the emitter base voltage is kept at 7.5V the current rating of this device is 5A a transition frequency of 72MHz
ZXT13N15DE6TA Applications
There are a lot of Diodes Incorporated ZXT13N15DE6TA applications of single BJT transistors.