MMBT8099LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 1mA 5V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 150MHz.This device can take an input voltage of 80V volts before it breaks down.In extreme cases, the collector current can be as low as 500mA volts.
MMBT8099LT1G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz
MMBT8099LT1G Applications
There are a lot of ON Semiconductor MMBT8099LT1G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
