2N5551G Overview

In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.In the part, the transition frequency is 100MHz.Collector current can be as low as 600mA volts at its maximum.

2N5551G Features

the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

2N5551G Applications

There are a lot of ON Semiconductor 2N5551G applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface