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2N5551G

2N5551G

2N5551G

ON Semiconductor

2N5551G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5551G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Contact Plating Copper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2001
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 160V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 600mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N5551
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.07000 $0.07
500 $0.0693 $34.65
1000 $0.0686 $68.6
1500 $0.0679 $101.85
2000 $0.0672 $134.4
2500 $0.0665 $166.25
2N5551G Product Details

2N5551G Overview


In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.In the part, the transition frequency is 100MHz.Collector current can be as low as 600mA volts at its maximum.

2N5551G Features


the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

2N5551G Applications


There are a lot of ON Semiconductor 2N5551G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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