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ZXT13N20DE6TA

ZXT13N20DE6TA

ZXT13N20DE6TA

Diodes Incorporated

ZXT13N20DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXT13N20DE6TA Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.5A
Frequency 96MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXT13N20D
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.7W
Transistor Application SWITCHING
Gain Bandwidth Product 96MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 230mV @ 45mA, 4.5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 96MHz
Collector Emitter Saturation Voltage 170mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current 4.5A
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.648904 $0.648904
10 $0.612173 $6.12173
100 $0.577522 $57.7522
500 $0.544832 $272.416
1000 $0.513993 $513.993
ZXT13N20DE6TA Product Details

ZXT13N20DE6TA Overview


This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 170mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 230mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 4.5A.Keeping the emitter base voltage at 7.5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4.5A current rating.As you can see, the part has a transition frequency of 96MHz.There is a breakdown input voltage of 20V volts that it can take.In extreme cases, the collector current can be as low as 4.5A volts.

ZXT13N20DE6TA Features


the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 170mV
the vce saturation(Max) is 230mV @ 45mA, 4.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4.5A
a transition frequency of 96MHz

ZXT13N20DE6TA Applications


There are a lot of Diodes Incorporated ZXT13N20DE6TA applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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