ZXT13N20DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXT13N20DE6TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Number of Pins
6
Weight
14.996898mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
20V
Max Power Dissipation
1.1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
4.5A
Frequency
96MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXT13N20D
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.7W
Transistor Application
SWITCHING
Gain Bandwidth Product
96MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
230mV @ 45mA, 4.5A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
96MHz
Collector Emitter Saturation Voltage
170mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
7.5V
Continuous Collector Current
4.5A
Height
1.3mm
Length
3.1mm
Width
1.8mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.648904
$0.648904
10
$0.612173
$6.12173
100
$0.577522
$57.7522
500
$0.544832
$272.416
1000
$0.513993
$513.993
ZXT13N20DE6TA Product Details
ZXT13N20DE6TA Overview
This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 170mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 230mV @ 45mA, 4.5A means Ic has reached its maximum value(saturated).In order to achieve high efficiency, the continuous collector voltage should be kept at 4.5A.Keeping the emitter base voltage at 7.5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4.5A current rating.As you can see, the part has a transition frequency of 96MHz.There is a breakdown input voltage of 20V volts that it can take.In extreme cases, the collector current can be as low as 4.5A volts.
ZXT13N20DE6TA Features
the DC current gain for this device is 300 @ 1A 2V a collector emitter saturation voltage of 170mV the vce saturation(Max) is 230mV @ 45mA, 4.5A the emitter base voltage is kept at 7.5V the current rating of this device is 4.5A a transition frequency of 96MHz
ZXT13N20DE6TA Applications
There are a lot of Diodes Incorporated ZXT13N20DE6TA applications of single BJT transistors.