ZXT13N50DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXT13N50DE6TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Number of Pins
6
Weight
14.996898mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
1.1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
4A
Frequency
115MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXT13N50D
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.7W
Transistor Application
SWITCHING
Gain Bandwidth Product
115MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
180mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
115MHz
Collector Emitter Saturation Voltage
145mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7.5V
Continuous Collector Current
4A
Height
1.3mm
Length
3.1mm
Width
1.8mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.673920
$0.67392
10
$0.635774
$6.35774
100
$0.599786
$59.9786
500
$0.565836
$282.918
1000
$0.533808
$533.808
ZXT13N50DE6TA Product Details
ZXT13N50DE6TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 1A 2V DC current gain.A collector emitter saturation voltage of 145mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 180mV @ 400mA, 4A.Continuous collector voltages should be kept at 4A to achieve high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As you can see, the part has a transition frequency of 115MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 4A volts is possible.
ZXT13N50DE6TA Features
the DC current gain for this device is 300 @ 1A 2V a collector emitter saturation voltage of 145mV the vce saturation(Max) is 180mV @ 400mA, 4A the emitter base voltage is kept at 7.5V the current rating of this device is 4A a transition frequency of 115MHz
ZXT13N50DE6TA Applications
There are a lot of Diodes Incorporated ZXT13N50DE6TA applications of single BJT transistors.