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ZXT13N50DE6TA

ZXT13N50DE6TA

ZXT13N50DE6TA

Diodes Incorporated

ZXT13N50DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXT13N50DE6TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Frequency 115MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXT13N50D
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.7W
Transistor Application SWITCHING
Gain Bandwidth Product 115MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 180mV @ 400mA, 4A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 115MHz
Collector Emitter Saturation Voltage 145mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current 4A
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.673920 $0.67392
10 $0.635774 $6.35774
100 $0.599786 $59.9786
500 $0.565836 $282.918
1000 $0.533808 $533.808
ZXT13N50DE6TA Product Details

ZXT13N50DE6TA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 1A 2V DC current gain.A collector emitter saturation voltage of 145mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 180mV @ 400mA, 4A.Continuous collector voltages should be kept at 4A to achieve high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As you can see, the part has a transition frequency of 115MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 4A volts is possible.

ZXT13N50DE6TA Features


the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 145mV
the vce saturation(Max) is 180mV @ 400mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4A
a transition frequency of 115MHz

ZXT13N50DE6TA Applications


There are a lot of Diodes Incorporated ZXT13N50DE6TA applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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