ZXTN19100CZTA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is 65mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 525mA, 5.25A.A constant collector voltage of 5.25A is necessary for high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.There is a transition frequency of 150MHz in the part.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 5.25A volts can be achieved.

ZXTN19100CZTA Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 65mV
the vce saturation(Max) is 350mV @ 525mA, 5.25A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz

ZXTN19100CZTA Applications

There are a lot of Diodes Incorporated ZXTN19100CZTA applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver