BDX53BG Description

The BDX53BG from ON Semiconductor is a Medium Power NPN Darlington Bipolar Power Transistor with 8 A, 100 V, and 65 W.

BDX53BG Features

• High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector Emitter Sustaining Voltage @ 100 mAdc

• VCEO(sus) = 80 Vdc (Min) BDX53B, 54B

• Low Collector-Emitter Saturation Voltage

• VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

• VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

• Monolithic Construction with Built-In Base-Emitter Shunt Resistors

• TO-220AB Compact Package

• Pb-Free Packages are Available

BDX53BG Applications

• General-purpose and low-speed switching applications