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BC556ABU

BC556ABU

BC556ABU

ON Semiconductor

BC556ABU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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BC556ABU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -65V
Max Power Dissipation 500mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC556
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -250mV
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 110
Height 5.33mm
Length 5.2mm
Width 4.19mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $17.231520 $17.23152
10 $16.256151 $162.56151
100 $15.335991 $1533.5991
500 $14.467916 $7233.958
1000 $13.648978 $13648.978
BC556ABU Product Details

BC556ABU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at -5V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).There is a transition frequency of 150MHz in the part.During maximum operation, collector current can be as low as 100mA volts.

BC556ABU Features


the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz

BC556ABU Applications


There are a lot of ON Semiconductor BC556ABU applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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