2SA1955FVATPL3Z Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 10mA 2V.The collector emitter saturation voltage is -30mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor can be broken down at a voltage of 12V volts.Supplier package CST3 contains the product.Collector Emitter Breakdown occurs at 12VV - Maximum voltage.During maximum operation, collector current can be as low as 400mA volts.

2SA1955FVATPL3Z Features

the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -30mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the supplier device package of CST3

2SA1955FVATPL3Z Applications

There are a lot of Toshiba Semiconductor and Storage 2SA1955FVATPL3Z applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver